Optical, vibrational, and electronic properties of semiconducting YbN

TL;DR

This study characterizes the vibrational, optical, and electronic properties of YbN thin films using spectroscopy and theoretical calculations, revealing insights into phonon modes, electronic transitions, and defect states.

Contribution

It provides a comprehensive experimental and theoretical analysis of YbN's properties, highlighting defect-induced absorption and electronic structure details.

Findings

Raman spectra show LO phonon and cation-vacancy mode.

Optical conductivity reveals TO phonon and 1.7 eV absorption edge.

Electrical measurements indicate Fermi energy in disordered conduction band.

Abstract

We investigate the vibrational, optical, and electronic properties of insulating YbN thin films using Raman spectroscopy, Fourier-transform infrared spectroscopy, and electrical transport measurements, supported by density functional theory. Raman spectra reveal the LO(${\Gamma}$) phonon and a cation-vacancy mode, while the optical conductivity identifies the TO phonon and an absorption edge corresponding to a 1.7 eV N 2p{$\rightarrow$}Yb 5d transition. The films exhibit thermally activated resistivity consistent with an insulating ground state. An additional defect induced absorption tail below the intrinsic band gap is observed, which in combination with the electrical measurements indicates the Fermi energy resides in a disordered conduction band minimum.