New Source of Spin-hot spot in displaced silicon double quantum dots
Sanjay Prabhakar

TL;DR
This study reveals a new type of spin-hot spot in displaced silicon double quantum dots, characterized by ultra-low spin-relaxation rates at low magnetic fields, promising for quantum computing applications.
Contribution
It identifies a novel spin-hot spot in displaced silicon double quantum dots with significantly reduced relaxation rates, advancing understanding of spin dynamics in quantum dot systems.
Findings
In double quantum dots, a new spin-hot spot appears as dots are pulled apart.
Spin-relaxation rates at these hot spots can be three orders of magnitude lower than in single dots.
Oscillations in spin-hot spots occur at low magnetic fields (~1T), with relaxation times from milliseconds to picoseconds.
Abstract
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of acoustic phonon in single and double quantum dots under in-plane and out-of-plane magnetic fields, showing that in single quantum dots the relaxation rate is highly sensitive to low in-plane magnetic fields () but converges near a spin-hot-spot region. In a single quantum dot, the spin-hot spot arises from well-understood level crossings between singlet and triplet states. In double quantum dots, a new and unusual spin-hot spot appears as the dots are pulled apart from the origin, with spin-relaxation rates three orders of magnitude lower than conventional single quantum dots. In displaced quantum dots dominated by magnetic confinement, two…
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