Tunable Crossed Andreev Reflection in Bipolar Magnetic Semiconductors

TL;DR

This paper proposes a method to control crossed Andreev reflection in bipolar magnetic semiconductors by tuning chemical potentials, enabling precise manipulation of nonlocal quantum transport for advanced spintronic applications.

Contribution

It introduces a novel approach to tunably enhance or suppress CAR in BMSs through independent chemical potential adjustments, advancing quantum transport control.

Findings

CAR can be selectively enhanced or suppressed in BMSs.

Tunable control of nonlocal electron-hole conversion demonstrated.

Potential for improved spintronic device functionalities.

Abstract

Crossed Andreev reflection (CAR) is a nonlocal quantum transport phenomenon that arises at the interface between a superconductor and two spatially separated metals. In this process, an electron incident from one metal combines with another electron originating from the other metal to form a Cooper pair in the superconductor. As a consequence, a hole is emitted into the second metal, establishing a nonlocal electron-hole conversion process. In contrast to local Andreev reflection -- where electron-to-hole conversion occurs within the same region -- CAR intrinsically links two spatially separated carriers, giving rise to nonlocal correlations and quantum entanglement. In bipolar magnetic semiconductors (BMSs), the conduction and valence bands possess opposite spin polarizations. We propose to achieve tunable control of CAR by independently adjusting the chemical potentials of the two regions. By engineering the alignment of spin-polarized bands in the two BMS leads, CAR can be selectively enhanced or suppressed. This tunability enables precise manipulation of nonlocal transport, and correlated electron dynamics, offering promising prospects for spintronic and superconducting device applications.