Application of exhaustive simulation flow for advanced performance prediction of monolithic active pixel sensors
E. Sacchetti, M. Babeluk, T. Bergauer, M. Friedl, C. Irmler, B. Pilsl, R. Russo, C. Schwanda, L. Gaioni, V. Re, E. Riceputi, G. Traversi, S. Giroletti, L. Ratti, G. F. Benfratello, S. Bettarini, F. Bosi, G. Casarosa, L. Corona, F. Forti, A. Gabrielli, M. Massa, L. Massaccesi

TL;DR
This paper introduces a comprehensive simulation flow for advanced performance prediction of monolithic active pixel sensors, integrating detailed electrical and charge propagation models to improve accuracy.
Contribution
The paper presents a novel simulation approach combining TCAD, Allpix Squared, and SPICE to accurately model MAPS performance, including irradiation effects.
Findings
Simulation results agree with measurements for TJ-Monopix2.
The methodology enhances understanding of pixel characteristics under irradiation.
The approach supports development of high-precision MAPS for particle detectors.
Abstract
Monolithic active pixel sensor (MAPS) developments have pushed the detection performance in various directions, especially relative to timing where nanosecond-level precision is now considered. This evolution calls for a simultaneous upgrade of the simulation tools. We have developed a simulation flow that covers steps from the signal creation in the sensitive volume to the output of the pixel digital logic that performs the time-of-arrival and time-over-threshold (ToA/ToT) measurements. This approach adds several new features to the traditional use the of the TCAD - Allpix Squared duo, among which : the integration of the pixel wells from the layout in order to precisely describe the pixel key characteristics such as leakage and punch-through currents and the coupling of Monte Carlo simulations (Allpix Squared) with high precision electrical simulations (SPICE). The first (Allpix…
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