Optical detection of the electron spin resonances of G centers in silicon

TL;DR

This paper explores the spin properties of G centers in silicon, demonstrating optical detection, optimal measurement sequences, and coherent control, advancing silicon-based quantum memory research.

Contribution

It provides the first detailed investigation of G center spin dynamics, including ODMR response, optimal measurement protocols, and coherence properties in silicon.

Findings

Identified optimal pulsed sequences for ODMR of G centers.

Detected level-anticrossing of G center electron spin states.

Demonstrated coherent control and characterized spin coherence times.

Abstract

Color centers in silicon are emerging as promising platforms for quantum technologies. Among them, the G center has attracted considerable interest owing to its bright telecom O-band single-photon emission and its optically addressable metastable electron-spin triplet state. Here we investigate the spin properties of ensembles of G centers under above-band-gap excitation. We elucidate the spin photo-dynamics giving rise to the optical detected magnetic resonance (ODMR) response of G centers. The optimal pulsed sequence for measuring the ODMR spectrum of the G defects is identified, along with the temperature and optical-power regimes maximizing the spin readout contrast. Through magneto-optical measurements, we detect a level-anticrossing of the G center electron spin states. At last, we demonstrate coherent spin control of the defects, and characterize their spin-coherence properties. Unveiling the spin degree of freedom of the G center opens new avenues for the realization of quantum memories and quantum registers based on silicon color centers.