A Fully Tunable Ultra-Low Power Current-Mode Memory Cell in Standard CMOS Technology
Arthur Fyon, Loris Mendolia, Jean-Michel Redout\'e, Alessio Franci, Guillaume Drion

TL;DR
This paper presents a fully tunable, ultra-low power current-mode memory cell in CMOS technology, enabling flexible analog computing and neuromorphic applications with robust hysteresis and minimal power consumption.
Contribution
It introduces a novel, fully tunable current-mode memory cell using only nine transistors, combining low power, temperature stability, and independent parameter tunability.
Findings
Simulations confirm robust hysteresis and device mismatch resilience.
The circuit enables asynchronous spike-based logic operations.
It serves as a primitive for noise-immune neural network units.
Abstract
This work introduces a fully tunable, ultra-low power unipolar memory cell inspired by the Schmitt-trigger comparator and designed in CMOS using only nine transistors. The proposed circuit operates entirely in the current domain and exploits a novel feedback configuration between two interdependent Heaviside-like thresholding elements to produce tunable bistable switching behavior. Its three key parameters-threshold current, hysteresis width, and output gain-are independently tunable via programmable bias currents, enabling flexibility across diverse analog computing applications. Unlike prior Schmitt-trigger designs, it simultaneously achieves current-mode operation, nanowatt-range power consumption, temperature stability, and full tunability, solely using standard MOSFET elements. Schematic-level simulations in a 180 nm CMOS process confirm robust hysteresis and resilience to device…
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