Physics-Grounded Understanding of Thermal Boundary Conductance between Ga$_2$O$_3$ and SiC from a Feedforward Neural Network Potential
Nuohao Liu, Chen Shen, Yue Cao, Song Xue, Pingfan Wu, Zongfang Lin, Masood Mortazavi, Liang Peng, Izabela Szlufarska, Jiechen Wang

TL;DR
This study develops a neural network potential to predict and understand thermal boundary conductance at Ga$_2$O$_3$/SiC interfaces, providing insights into heat transfer mechanisms relevant for power electronics.
Contribution
A transferable neural network potential is created and validated, enabling large-scale simulations and mechanistic understanding of interfacial thermal conductance.
Findings
TBC decreases with transport length
TBC increases with temperature
Higher TBC for Ga$_2$O$_3$ $(ar{2}01)$/SiC(0001) interface
Abstract
GaO/SiC heterointegration is attractive for ultra-wide-bandgap power electronics, but interfacial thermal boundary conductance (TBC) remains a major heat-removal bottleneck. Direct experimental access to intrinsic atomistic interfacial transport remains limited, particularly for ideally synthesized materials with defect-free interfacial contact. First-principles simulations are too expensive at relevant length and time scales, while empirical Molecular Dynamics (MD) potentials often lack transferability across oxide and carbide bonding environments. We develop a unified feedforward neural network potential and validate it against density-functional data, bulk phonon dispersions, and anisotropic thermal-conductivity trends in both -GaO and SiC. Nonequilibrium simulations show that TBC decreases with transport length, increases with temperature, and is consistently…
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