Field-induced asymmetric band flattening and ideal quantum geometry in rhombohedral graphene
Hongyun Zhang, Jinxi Lu, Size Wu, Yijie Wang, Kai Liu, Fei Wang, Wanying Chen, Lingzhi Wen, Jinling Zhou, Kenji Watanabe, Takashi Taniguchi, Jose Avila, Pavel Dudin, Matthew D. Watson, Takafumi Sato, Pu Yu, Wenhui Duan, Zhida Song, Guorui Chen, Shuyun Zhou

TL;DR
This study visualizes how displacement fields induce asymmetric band flattening in rhombohedral graphene, linking band structure evolution and quantum geometry to the emergence of correlated and topological phases.
Contribution
It provides direct experimental visualization of field-induced asymmetric band flattening and links it to quantum geometry and topological phase emergence in rhombohedral graphene.
Findings
Flat valence band becomes M-shaped at high fields.
Flat conduction band progressively flattens with increasing field.
Finite Berry curvature supports topological phases under electron doping.
Abstract
Rhombohedral graphene exhibits an exceptionally diverse array of correlated phases that depend sensitively on the displacement field. Compiling reported phases into a unified phase diagram reveals a pronounced field-dependent electron-hole asymmetry: correlated states on the hole-doped side emerge at small displacement fields, whereas the fractional quantum anomalous Hall effect (FQAHE) is observed exclusively on the electron-doped side under large displacement fields. This stark asymmetry highlights the need to understand how flat bands evolve with displacement fields. Here, we directly visualize the field-induced electron-hole asymmetric band flattening in rhombohedral pentalayer graphene (R5G) using nanospot angle-resolved photoemission spectroscopy with electrostatic gating. Beyond gap opening and spectral weight redistribution indicative of layer polarization, the gating field…
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