Scattering-Induced Loss in Ferroelectric Photonic Devices

TL;DR

This paper develops a perturbative theory to quantify scattering-induced loss in ferroelectric photonic devices, linking material disorder to optical attenuation and guiding loss reduction strategies.

Contribution

It introduces a general spectral density-based model for elastic photon scattering loss, applicable to realistic ferroelectric domain structures without symmetry constraints.

Findings

Loss peaks when domain size matches light wavelength (Mie regime).

Sub-micron domains or single domains both reduce loss at telecom wavelengths.

The theory enables numerical predictions of loss from electron microscopy images.

Abstract

Ferroelectric materials have colossal optical nonlinearities, but their integration into quantum photonic chips is made challenging by the additional loss mechanisms that they introduce. Here we present a perturbative theory that expresses non-absorptive (elastic) photon scattering-induced loss as a functional of a general spectral density for spatial fluctuations of electric permittivity. We apply the theory to calculations of attenuation coefficients $\alpha$ in slab waveguides in order to compare two distinct loss mechanisms: Interface roughness and ferroelectric domain disorder. our theory can account for realistic roughness without special symmetry considerations, and it demonstrates how to use electron microscoopy images of ferroelectric domains to obtain explicit numerical predictions for $\alpha$. Loss is maximum when the mean domain length is comparable to the wavelength of light (Mie regime), indicating that, for telecom wavelengths, sub-micron domains (Rayleigh regime) or single domain waveguides provide equivalent strategies for reducing loss.