Initial Development of MBE-Grown InAs Diodes for Thermoradiative Energy Harvesting

TL;DR

This paper reports the initial development of InAs thermoradiative diodes grown by molecular beam epitaxy, focusing on their electrical properties for energy harvesting applications.

Contribution

It introduces a new fabrication process for InAs diodes with specific growth parameters and characterizes their electrical performance.

Findings

Breakdown voltages above 0.3 V achieved.

Reverse saturation current densities are 200 times the radiative limit.

Diodes grown at 450 C with specific flux conditions show optimal results.

Abstract

We describe the development of 1x1 mm2 InAs thermoradiative diodes grown by molecular beam epitaxy with emphasis on their reverse saturation current and break-down voltage. P-i-n diode structures grown at 450 C, with As2 flux around 3 times stoichiometry and an In effusion cell tip temperature 150 C higher than the base temperature, exhibit the best results with breakdown voltages above 0.3 V and reverse saturation current densities 200 times the radiative limit.