Interfacial charge-induced adsorption mode for electron pairing in high-temperature superconductors

TL;DR

This paper reveals a new interfacial charge-induced adsorption mechanism for electron pairing in high-temperature superconductors, providing detailed theoretical derivations and quantitative predictions consistent with experimental data.

Contribution

It introduces a novel interfacial charge-induced adsorption mode as the pairing mechanism in high-Tc superconductors, with detailed theoretical analysis and close-to-experimental predictions.

Findings

Derived the effective interaction potential between electrons.

Showed d-wave symmetry arises from anisotropic interfacial forces.

Predicted the superconducting gap close to 17 meV, matching experimental results.

Abstract

The electron pairing mechanism by the interfacial charge-induced adsorption mode of high-temperature superconductors is revealed. For the YBCO superconductors, the coupling of electrons and valence-flexible state of oxygen ions forms a charge-regulated interfacial layer induced by the adsorption potential, and electrons are paired by sharing the optimized interfacial structure and exchanging the adsorption mode, generating strong attraction to form Cooper pairs. Then the effective interaction potential between electrons is exactly derived in details, as well as the electron-adsorption-mode coupling strength, in which the adsorption coupling constant is up to 43.4. Furthermore, we verify that d-wave come from the anisotropy of interfacial adsorption forces, and explain the pseudo-energy gap behavior. By using the one-dimensional Ginzburg-Landau equation in the absence of a magnetic field, we obtain the coherence length expression, and the coherence length calculated is very close to the literature results. By establishing the energy gap equation, we obtain the superconducting gap , which is very close to the measured result of 17meV by Scanning Tunneling Microscopy/Spectroscopy. These quantitative predictions close to the known results could verify our theoretical framework.