Numerical Validation of a MOSFET-Based Control Circuit for High-Power Intelligent Reflecting Surfaces for Wireless Power Transfer Applications
Gakuto Ichikawa, Eisuke Omori, Atsuko Nagata, Akise Kumashiro, Kazuhiro Kizaki, Shunsuke Saruwatari, Hiroki Wakatsuchi

TL;DR
This paper introduces a MOSFET-based control circuit for high-power IRSs at 2.4 GHz, capable of handling over 1 W per unit cell, validated through theoretical modeling and simulations for wireless power transfer.
Contribution
The work presents a novel MOSFET-based binary control circuit design that withstands high input power and maintains phase control, enabling high-power IRS deployment.
Findings
Stable operation up to 1.25 W input power.
Impedance variation suppression via back-to-back MOSFET topology.
Successful beam steering demonstrated through simulations.
Abstract
Intelligent reflecting surfaces (IRSs) have attracted considerable attention because of their ability to dynamically control electromagnetic wave propagation. While most existing IRSs have been developed for low-power communication and sensing applications, their extension to high-power wireless power transfer (WPT) environments remains largely unexplored, as the high induced currents can damage or saturate the sensitive control elements, disrupting their tuning functionality. Here, we propose a metal-oxide-semiconductor field-effect transistor-based (MOSFET-based) binary control circuit for IRSs operating at 2.4 GHz that can withstand input power levels exceeding 1 W per unit cell. The control circuit employs a back-to-back MOSFET switching topology with series and parallel capacitors to suppress impedance variations arising from device nonlinearity while maintaining a reflection phase…
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