VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2

TL;DR

This paper reports high-voltage vertical heterojunction diodes using eta-Ga2O3 and NiOx with a PFOM over 2.3 GW/cm2, demonstrating record electric fields and low on-resistance for power electronics.

Contribution

It introduces a novel eta-Ga2O3/NiOx heterojunction diode with record-breaking electric field and power figure of merit for medium voltage power applications.

Findings

VBr > 10 kV/Ron,sp = 43 mΩ*cm2 achieved

Power figure of merit exceeds 2.3 GW/cm2

Parallel plane breakdown field > 5.3 MV/cm, highest for thick eta-Ga2O3 layers

Abstract

Beta-gallium oxide (\beta-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 m\Omega*cm2 class edge terminated vertical heterojunction diodes (HJDs) with e-beam/sputtered nickel oxide (NiOx) stack on epitaxial (011) \beta-Ga2O3. The power figure of merit (PFOM) of the HJD exceeds 2.3 GW/cm2. The extracted parallel plane breakdown field is > 5.3 MV/cm, which is the highest reported electric field for thick (011) \beta-Ga2O3 epitaxial drift layer.