Large quantum dot energy level shifts in anomalous photon-assisted tunneling

TL;DR

This study reveals unexpectedly strong and linear dependencies of singlet-triplet splittings in Ge/SiGe double quantum dots on top gate voltages, challenging previous assumptions of negligible effects.

Contribution

It demonstrates the significant influence of top gate voltages on orbital energy splittings and singlet-triplet splittings in quantum dots, supported by photon-assisted tunneling and pulsed-gate spectroscopy data.

Findings

ST splittings depend linearly on top gate voltages

Anomalous PAT measurements reveal strong gate dependence

Similar linear dependencies observed when tuning device ratios

Abstract

Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the typical control parameter for qubit applications, such energy splitting changes are typically negligible, both as measured in experiment and as assumed in effective theories. Here, we study the singlet-triplet (ST) splittings, which depend on the orbital splittings, of a double quantum dot (DQD) in a Ge/SiGe heterostructure using photon-assisted tunneling (PAT) and pulsed-gate spectroscopy. We find that the ST splittings have a surprising, strong dependence on the top gate voltages, leading to anomalous PAT measurements. We combine data from both measurements in a model that well describes the linear gate-voltage dependence of the ST splittings. Finally, we show that the ST splittings of the two dots exhibit similar linear gate-voltage dependences when the device is retuned such that their ratio is significantly different.