Proximity Ferroelectricity Driven by Mobile High-Miller-Index Domain Walls
Changming Ke, Shi Liu

TL;DR
This paper uncovers a new mechanism for ferroelectric switching in multilayered materials, driven by high-Miller-index domain walls that can migrate through undoped layers, explaining proximity ferroelectricity.
Contribution
It reveals that high-Miller-index domain walls facilitate low-field switching in multilayers, a process previously misunderstood, using first-principles and machine-learning simulations.
Findings
High-index domain walls can migrate with low barriers.
Dopants stabilize high-index walls and promote nucleation.
Mobile walls enable switching in thick undoped layers.
Abstract
Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in these materials is typically attributed to doping-induced softening of the bulk switching barrier. However, recent reports of proximity ferroelectricity, in which undoped AlN layers up to 500 nm thick fully switch in AlN/AlScN multilayers, challenge this view. Here, we reveal an alternative switching mechanism mediated by high-Miller-index domain walls, long overlooked due to their complex geometry and presumed instability. Using first-principles calculations and machine-learning molecular dynamics simulations, we show that these walls, once nucleated, migrate with exceptionally low barriers. The Sc dopants play a dual role: they stabilize high-index…
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