Physical Basis for Band Transport and Dimensionality in Amorphous Oxide Semiconductor Field-Effect Transistors

TL;DR

This paper develops a conceptual framework for understanding charge transport in amorphous oxide semiconductor FETs, emphasizing trap effects and quasi-2D channels, to improve device physics comprehension.

Contribution

It introduces a unified physical basis for interpreting charge transport in advanced AOS transistors with small channel lengths, integrating new and prior research findings.

Findings

Supports a trap-influenced band transport model in high mobility AOS FETs

Highlights the importance of morphology and electronic structure in device physics

Provides a basis for future device optimization and design

Abstract

A consistent and widely accepted physical basis for interpretation of charge transport in amorphous oxide semiconductor (AOS) field-effect transistors (FETs), and more generally device physics, has been hampered by uncertainties in crystalline order, dimensionality, and the effects of a significant density of traps. The overarching theme of this paper is to build and justify a much-needed conceptual framework for describing advanced AOS transistors, particularly those with very small channel lengths. Combining new work and selecting prior research results on charge transport and device physics together with literature reports from various groups on morphology, physical properties, electronic structure and percolation effects, the main evidence that is available in support of a trap-influenced band transport picture in quasi-2-dimensional channels in high mobility AOS FETs is presented.