Phase transformation kinetics in MoS2 governed by S-S repulsive interactions and defect-interface compatibility

TL;DR

This study uncovers how S-S repulsive interactions and defect-interface compatibility control phase transformation kinetics in monolayer MoS2, revealing new strategies for structural transition control in 2D materials.

Contribution

It introduces a novel understanding that local defect-interface compatibility, rather than global defect concentration, governs phase transformation kinetics in 2D materials.

Findings

S-S interactions create high energy barriers for phase change.

Sulfur vacancies do not accelerate transformation at the most stable interface.

Growth fronts predominantly adopt the ZZ-Mo|- configuration, consistent with low interfacial energy.

Abstract

The metastable T' phase in monolayer MoS2 exhibits remarkable persistence despite a strong thermodynamic driving force toward the stable H phase. Using machine learning-accelerated molecular dynamics and first-principles calculations, we reveal that this kinetic arrest originates from repulsive S-S interactions, which impose high energy barriers during both nucleation and grain boundary propagation. While sulfur vacancies can alleviate these barriers in certain interfaces, they fail to accelerate transformation at the most stable interface, ZZ-Mo|-, due to their thermodynamic instability there. Instead, vacancies migrate into the T' phase, leaving the advancing front defect-free. Direct simulations of nanostructures confirm that H-phase nucleation initiates at corners or edges, and all observed growth fronts adopt the ZZ-Mo|- configuration, consistent with its low interfacial energy but slow kinetics. Our work establishes that phase transformation in 2D materials is governed not by global defect concentration, but by the local compatibility between defects and moving interfaces, offering a new paradigm for controlling structural transitions through interface-specific design.