Three-dimensional topological ferroelectrics

TL;DR

This paper predicts a new 3D topological ferroelectric insulator in bismuth monohalides, demonstrating stability, switchable polarization, and potential for spintronic device applications.

Contribution

It introduces the $eta$ phase of Bi4Br4 and Bi4I4 as intrinsic 3D topological ferroelectric insulators with switchable polarization and spin-filter device design.

Findings

$eta$-Bi4X4 (X=Br, I) are stable and synthesizable.

The spin Chern number $C_{s_z}=2$ indicates nontrivial topology.

A spin-filter device can generate switchable spin-polarized current.

Abstract

Three-dimensional (3D) topological ferroelectric (FE) insulators, in which topological and FE orders naturally coexist, enable field-controlled spintronic devices. In this work, we predict a new structure of bismuth monohalides Bi4Br4 and Bi4I4, denoted $\gamma$ phase, and demonstrate that it is an ideal 3D topological FE insulator. Systematic first-principles calculations confirm the stability and synthesizability of $\gamma$-Bi4X4 (X=Br, I). Although the noncentrosymmetric $\gamma$ phase crystallizes in the space group $Cmc2_1$ with no symmetry-based classifications/indicators, the nontrivial topology can be characterized by the spin Chern number (SCN). Spin-resolved Wilson loops show the $s_z$ SCN $C_{s_z}=2$, indicating the spin-resolved topology of a 3D quantum spin Hall insulator state. The $z$-direction polarization can be switched by interlayer sliding, requiring only crossing a small energy barrier. Finally, we design an electrically controlled spin-filter device on bilayer films that can generate a switchable spin-polarized current. Combining a single-phase crystal, a sizable band gap, and robust band topology against FE switching, these bismuth monohalides serve as a prototype of intrinsic 3D topological FE insulators, providing an ideal platform for realizing new nonvolatile functionalities in spintronic devices.