Stark-tunable O-band single-photon sources based on deterministically fabricated quantum dot--circular Bragg gratings on silicon
Sarthak Tripathi, Kartik Gaur, Priyabrata Mudi, Peter Ludewig, Alexander Kosarev, Kerstin Volz, Imad Limame, Stephan Reitzenstein

TL;DR
This paper presents a silicon-compatible, electrically tunable single-photon source operating in the telecom O-band, combining high efficiency, spectral tunability, and elevated-temperature operation for quantum network applications.
Contribution
Demonstration of electrically contacted quantum dot circular Bragg grating resonators on silicon with record Stark shift and high photon purity at telecom wavelengths.
Findings
Quantum-confined Stark shift of 16 nm at 4 K.
Photon extraction efficiency of approximately 21.7%.
Single-photon purity with g^{(2)}(0) below 0.02 at low temperature.
Abstract
Semiconductor quantum dots (QDs) offer outstanding quantum-optical properties, making them highly attractive for quantum information technologies. However, combining wide-range electrical tunability, efficient photon extraction, elevated-temperature operation, monolithic silicon integration, and telecom-wavelength compatibility remains a major challenge. Here, we demonstrate electrically contacted circular Bragg grating (eCBG) resonators incorporating InGaAs QDs directly grown on silicon, enabling bright single-photon emission in the telecom O-band. Deterministic electron-beam lithography and a ridge-based vertical p--i--n diode architecture enable precise device integration and electrical control of individual emitters. The QD--eCBGs exhibit a quantum-confined Stark shift of approximately 16 nm (11 meV) at 4 K, representing a record for QDs embedded in nanophotonic structures at…
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