Nature of point defects in bulk hexagonal diamond

TL;DR

This study uses first-principles calculations to analyze point defects and dopants in bulk hexagonal diamond, revealing their effects on conductivity and quantum applications.

Contribution

It provides a comprehensive understanding of defect physics in hexagonal diamond, highlighting potential for conductivity control and quantum technology applications.

Findings

VC dominates intrinsic conductivity in HD.

Boron acts as a benign acceptor for p-type conductivity.

Defect complexes like VC, MgC, and XV have multiple spin and charge states, useful for qubits.

Abstract

Hexagonal diamond (HD), an exotic carbon allotrope recently synthesized in bulk form, exhibits superior mechanical properties compared to cubic diamond (CD) and holds promise for advanced industrial and quantum applications. Using first-principles calcu-lations, we systematically investigate intrinsic defects, extrinsic dopants, and defect complexes in HD. Our study shows that VC dominates intrinsic conductivity, while Ci is unstable. Among extrinsic dopants, boron acts as a benign acceptor enhancing p-type conductivity, whereas nitrogen and phosphorus serve as effective donors for n-type conductivity. Group II and Group IV dopants, however, introduce high formation energies or neutral charge states with limited impact. Furthermore, VC, MgC and XV defect com-plexes display multiple spin and charge states within the HD band gap, highlighting their potential as color centers for hosting qubits. These results not only clarify the defect physics of HD but also demonstrate its broader implications for conductivity engineering and quantum technologies.