Disorder-induced crossover from phase-averaging to mode-mixing regimes in magnetic domain walls of a second-order topological insulator

TL;DR

This study explores how disorder affects electronic transport in magnetic domain walls of a second-order topological insulator, revealing a crossover from phase-averaging to mode-mixing regimes with distinct conductance signatures.

Contribution

It introduces a theoretical framework to identify disorder-induced crossover regimes in topological insulator domain walls through conductance fluctuation analysis.

Findings

Disorder suppresses Aharonov-Bohm oscillations in conductance.

A half-quantized conductance plateau emerges under disorder.

Distinct conductance fluctuation plateaus characterize PAR and MMR regimes.

Abstract

We investigate electronic transport across a magnetic domain wall (DW) in a three-dimensional (3D) second-order topological insulator subject to Anderson disorder. In the clean limit, the DW hosts two co-propagating one-dimensional (1D) topological edge states that act as the two arms of an effective Aharonov-Bohm (AB) interferometer, inducing a sinusoidal conductance oscillation. Upon the introduction of disorder, the AB oscillations are suppressed, while a half-quantized plateau of $0.5 e^2/h$ for the ensemble-averaged conductance emerges. Notably, within this plateau, the conductance fluctuation exhibits a distinctive two-step plateau structure, with values of $\sim 0.35 e^2/h$ at moderate disorder, followed by a second plateau at $\sim0.29 e^2/h$ under strong disorder. By developing theoretical frameworks that account for the random-phase interference and inter-mode mixing of the two arms, we identify the first fluctuation plateau as a signature of the phase-averaging regime (PAR) and the second as a signature of the mode-mixing regime (MMR). Furthermore, we show that, in the PAR the conductance follows a U-shaped beta distribution, while it evolves into a uniform distribution in the MMR. The Fano factor associated with shot noise is also computed, which exhibits a similar two-step plateau structure at $1/4$ and $1/3$, corresponding to the PAR and MMR, respectively. Our work provides a clear demonstration of the disorder-induced crossover from PAR to MMR, and highlights the crucial role of second-order conductance cumulants in identifying these transport regimes. The results suggest disorder-engineering as a powerful route for controlling electronic transport across DW-based devices.