Pressure-Tuned Competing Electronic States in Layered Tellurides
Mahmoud Abdel-Hafiez, Govindaraj Lingannan, D. A. Chareev, A. N. Vasiliev, Anas Abutaha, Kadir Can Dogan, Mehmet Yagmurcukardes, Mehmet Egilmez, Hasan Sahin, Sami El-Khatib

TL;DR
This study investigates how hydrostatic pressure influences electronic states and magnetotransport in layered 2H-MoTe2, revealing a transition from localized hopping to quantum interference regimes and a pressure-induced bandgap collapse.
Contribution
It provides a comprehensive experimental and theoretical analysis of pressure-induced electronic phase transitions in layered tellurides, unifying hopping and quantum-coherent transport behaviors.
Findings
High magnetic field magnetoresistance up to 60 T observed.
Pressure suppresses insulating state, induces quantum interference effects.
First-principles calculations show bandgap collapse into semimetallic structure.
Abstract
Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here we investigate magnetotransport in bulk semiconducting 2H-MoTe2 under hydrostatic pressure. At ambient pressure, transport evolves from high-temperature metallic behavior into activated conduction and ultimately a strongly localized variable-range hopping regime, accompanied by a pronounced magnetotransport anomaly near 45 K and large, nonsaturating magnetoresistance extending up to an unprecedented field of 60 T in semiconducting 2H-MoTe2. Under compression to 15.6 GPa, the insulating state is rapidly suppressed and a low-resistivity regime emerges in which quantum interference dominates, exhibiting a crossover from weak antilocalization (WAL) to…
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