Valley-Aware Optimal Control of Spin Shuttling Using Cryogenic Integrated Electronics
Pau Dietz Romero, Nermine Chaabani, Lammert Duipmans, Alessandro David, Felix Motzoi, Stefan van Waasen, Lotte Geck

TL;DR
This paper presents a cryogenic control system for spin qubit electron shuttling that enhances fidelity and scalability by integrating waveform generation, valley disorder mitigation, and noise-aware optimization.
Contribution
It introduces a co-simulation framework, an integrated cryogenic shuttling signal generator, and a noise-aware optimization method for high-fidelity spin shuttling.
Findings
Achieves 99.99% shuttling fidelity over 10 μm at 20 m/s.
Maintains active power consumption in the tens of μW range.
Validates on-chip storage and replay of control settings for disorder mitigation.
Abstract
Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power constraints on the control electronics. Concurrently, shuttling in Si/SiGe is further limited by a spatially varying valley splitting that induces spin--valley mixing and degrades coherence. Here, we make three contributions that address these limitations jointly: (i) an end-to-end co-simulation framework that combines disorder-informed valley maps with transistor-level cryogenic circuit simulations including electronic noise; (ii) a fully integrated cryogenic shuttling-signal generator tailored to velocity modulation, enabling period-wise waveform shaping through discrete circuit settings stored in on-chip memory; and (iii) a noise-aware optimization…
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