Distinguishing and Separating In-Plane Hall Responses

TL;DR

This paper presents a universal framework to distinguish different contributions to in-plane Hall effects in topological materials, using symmetry analysis and a 12-terminal device, exemplified on Fe3Sn.

Contribution

It introduces a method to disentangle multiple phenomena in in-plane Hall measurements through symmetry and angular dependence analysis.

Findings

Successfully applied the framework to Fe3Sn, revealing distinct contributions to the Hall voltage.

Provides a standardized approach for future studies of in-plane Hall responses.

Enhances interpretation accuracy of Hall measurements in topological and magnetic materials.

Abstract

Electric Hall effects generated by an in-plane magnetic field have recently gained attention owing to their intrinsic origin in topological electronic states and potential application in magnetic field sensing. In pratice, the measured transverse electric voltage typically combines contributions from multiple phenomena, such as anisotropy and Berry curvature effects, leading to interpretative ambiguities of the measurement signal. Here, we introduce a universal framework that disentangles these contributions via their distinct field-reversal symmetries and angular dependencies. Leveraging a 12-terminal Hall bar for independent control of the electric and in-plane magnetic field directions, we exemplify this method by analyzing the transverse electric voltage recorded on the the ferromagnetic Weyl semimetal Fe3Sn in an in-plane geometry. The standardized approach presented in this work will guide future studies of in-plane Hall responses in magnetic and topological materials.