Stability of Charge Collection Efficiency and Time Resolution in a Novel Ultra-fast Graphene-Optimized Silicon Carbide Detector Under X-ray Irradiation
Zhenyu Jiang, Congcong Wang, Jingxuan He, Yi Zhan, Yingjie Huang, Xiyuan Zhang, Xin Shi

TL;DR
This study presents a graphene-optimized silicon carbide detector with outstanding stability, charge collection efficiency, and timing resolution under high-dose X-ray irradiation, suitable for radiation-hard applications.
Contribution
The paper introduces a novel graphene-optimized silicon carbide detector demonstrating superior stability and performance after extreme X-ray irradiation.
Findings
Maintains low leakage current (~2.2e-10 A @ 300 V) after 1 MGy irradiation.
Achieves a time resolution of 58.0 ps, comparable to state-of-the-art detectors.
Exhibits 99.24% charge collection efficiency after X-ray exposure.
Abstract
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles (90Sr) are reported. After 1 MGy irradiation, the detector maintains an ultralow leakage current of approximately 2.2e-10 A @ 300 V and the C-V characteristics are basically consistent with full depletion at 120V. The time resolution of the graphene-optimized silicon carbide detector is 58.0 ps. The time resolution is comparable to that of state-of-the-art 4H-SiC low-gain avalanche detectors (LGADs). The G/RE 4H-SiC PIN detector exhibits outstanding time resolution performance. Compared with the time resolution of the RE 4H-SiC PIN detector, the time resolution of the G/RE 4H-SiC PIN detector has decreased by 39.6%. This demonstrates the significance of…
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