Quantum transport in gapped graphene under strain and laser--electrostatic barriers

TL;DR

This study investigates how laser, strain, and potential barriers influence electron transport in gapped graphene, revealing controllable transmission behaviors useful for optoelectronic applications.

Contribution

It introduces a comprehensive analysis of electron transmission in gapped graphene under combined effects of laser modulation, strain, and potential barriers using the transfer-matrix method.

Findings

Increasing laser field amplitude enhances transmission.

Moderate zigzag strain causes Fano-type oscillations in transmission.

Higher laser frequencies tend to suppress electron transmission.

Abstract

Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the transmission probabilities as functions of different system parameters. Without strain, raising either the energy gap or the potential generally reduces transmission in the central and lower sidebands. Moderate zigzag strain generates pronounced Fano-type oscillations that vanish at large strain, while transmission increases for low potential and decreases for high values. In the upper sideband, the incidence energy shifts the resonance peaks to the right, and growing the barrier width generates characteristic oscillatory patterns. Furthermore, increasing the laser field amplitude enhances transmission, whereas higher laser frequencies tend to suppress it. These findings offer new perspectives on controlling electronic transport in gapped graphene via external fields, strain, and potential applications in optoelectronic devices.