Experimental Signatures of Topological Transport in Polycrystalline FeSi Thin Films
R. Mantovan, A. Bozhko, V. Zhurkin, A. Bogach, A. Khanas, S. Zarubin, A. Zenkevich, V. Glushkov

TL;DR
This study demonstrates that polycrystalline eSi thin films exhibit intrinsic topological transport phenomena, including the anomalous Hall effect and Weyl semimetal characteristics, despite disorder and polycrystallinity.
Contribution
It provides experimental evidence of topological features in disordered polycrystalline eSi films, revealing their potential as high-temperature Weyl semimetals.
Findings
Intrinsic anomalous Hall conductivity observed below 200 K.
Topological features confirmed by chiral anomaly in magnetoresistance.
Estimated Weyl point separation of approximately 0.36.
Abstract
Disorder in any form is considered to be highly detrimental to the experimental exploration of novel phenomena in quantum materials with non-trivial band topology. Contrary to established belief, clear topological features are reliably detected in the electron transport of polycrystalline 65-nm-thick \epsilon -FeSi films grown via solid-state reaction of Fe deposited on a Si(100) substrate. The observation of temperature-independent anomalous Hall conductivity \sigma_{xy}^{AHE} \sim const (\sigma_{xx)) (\sigma_{xy}^{AHE} \approx 14 uS/sq.) below 200 K firmly proves the anomalous Hall effect in this compound to be intrinsic and originating from a non-trivial Berry phase. The discovered scaling dominates over the nanoscale (\sim 40 nm) polycrystalline texture and is robust to temperature crossover between bulk and surface modes of electron transport. The non-trivial topological state of…
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