Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy

TL;DR

This paper presents a method for imaging anti-phase domains in III-V materials using scanning electron microscopy, analyzing contrast variations with different parameters and processing images to identify boundaries.

Contribution

It introduces a quantitative approach for anti-phase domain imaging in orientation-patterned GaP and a qualitative method for other III-V materials on non-polar substrates.

Findings

Contrast depends on electron beam energy and tilt angle.

Processed images reveal in-plane anti-phase boundaries.

Quantitative analysis improves domain contrast detection.

Abstract

Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 {\mu}m thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries.