Quantum-Well-Metasurface to Maximize Nonlinear Polarization

TL;DR

This paper demonstrates a novel approach combining bandstructure engineering and metasurfaces to significantly enhance nonlinear polarization in GaAs/AlGaAs heterostructures, enabling more efficient nonlinear photonic devices.

Contribution

It introduces a method to engineer nonlinear susceptibilities and optimize electromagnetic fields using metasurfaces on heterostructures for improved nonlinear effects.

Findings

Achieved a large second-order nonlinear tensor element of 1.6 nm/V at 1.57 μm.

Boosted effective nonlinearity to approximately 14 nm/V with a patterned metasurface.

Proved that interband transition engineering and metasurfaces can enable giant nonlinearities in the near-infrared to visible spectrum.

Abstract

Nonlinear frequency conversion unlocks technologies ranging from telecommunications to quantum computation; however, weak nonlinearities and architectures that resist miniaturization currently limit devices. Here, we combine a bandstructure-engineered GaAs/AlGaAs heterostructure with a high quality factor dielectric metasurface to simultaneously tailor the intrinsic nonlinear susceptibility and optimize the electromagnetic field within the heterostructure. By engineering a resonant interband transition, we realize a large second-order nonlinear tensor element, 1.6 nm/V at 1.57 um wavelength. We then make it free-space-accessible and boost the effective nonlinearity to ~ 14 nm/V using a metasurface patterned on the material. Our proof-of-concept experiment establishes that interband transition engineering and metasurfaces accessing otherwise unusable nonlinear tensor elements enable giant effective nonlinearities in the near-infrared to visible spectrum. This addresses material and device-level constraints in nonlinear photonics, providing a scalable route to compact, efficient devices.