Layer-dependent quantum transport in KV2Se2O-based altermagnetic tunnel junctions

TL;DR

This study investigates layer-dependent quantum transport and giant tunneling magnetoresistance in KV2Se2O-based altermagnetic tunnel junctions, revealing interface effects on electron transmission.

Contribution

It introduces a novel altermagnetic tunnel junction design based on KV2Se2O and explores how layer parity influences quantum transport and TMR.

Findings

Transmission oscillates with the number of SrTiO3 layers due to interface configuration.

Odd-layer devices have enhanced transmission due to smoother interfaces.

A giant TMR of 4.6×10^7% is predicted for a 4-layer SrTiO3 barrier.

Abstract

Magnetic tunnel junction (MTJ) is the key component to enable information access and increasing number of MTJs is integrated to develop high-density spintronic devices. However, continuous miniaturization of the conventional MTJs is hindered by stray magnetic fields. Altermagnets, combining the advantages of both ferromagnets and antiferromagnets, provide a promising alternative to fabricate versatile MTJs with exotic properties, such as giant spin splitting, high intrinsic frequency, and absence of stray fields. Inspired by the altermagnetic metal candidate KV2Se2O reported recently, we design an altermagnetic tunnel junction (AMTJ) based on KV2Se2O/SrTiO3/KV2Se2O. Using density functional theory combined with non-equilibrium Green's function, we investigate the layer-dependent quantum transport properties and the tunneling magnetoresistance (TMR) of such AMTJ device. Our calculated results reveal that the transmission of the AMTJ device exhibits a pronounced oscillation behavior dependent on the number of layers of the SrTiO3 semiconductor, which is attributed to the interface configuration determined by parity of the layer number. In odd-layer devices, the electron-rich O-Se interface exhibits a smooth effective potential and enables transverse momentum (k||) transport channels, leading to enhanced transmission. In contrast, in even-layer devices, the Ti-Se interface presents a steeper effective potential, impeding quantum transport through transverse momentum (k||) channels. A giant TMR of 4.6*10^7% is predicted to be realized by using a 4-layer SrTiO3. Our findings not only provide physical understanding relevant to the quantum transport in AMTJs, but also unveil that the barrier interface engineering is a strategy to tune the magnetoelectric performance.