Ultra-high-vacuum cluster tool for epitaxial synthesis and optical spectroscopy of reactive 2D materials
M. Dembecki, J. Schabesberger, M. Bissolo, A. Thurn, A. Ulhe, P. Avdienko, J. Ulrichs, H. Riedl, G. Koblm\"uller, E. Zallo, J.J. Finley

TL;DR
This paper introduces an ultra-high-vacuum cluster tool for the growth and optical characterization of reactive 2D materials, enabling pristine in situ analysis with high spatial resolution and temperature control.
Contribution
It presents a novel integrated system combining molecular beam epitaxy and optical spectroscopy for 2D materials, with a new deconvolution algorithm for vibration correction.
Findings
Successful growth of unstable 2D semiconductors under ultra-high vacuum.
High-resolution in situ optical analysis at low temperatures.
Effective vibration correction enabling detailed spatial characterization.
Abstract
The large-area synthesis of high-crystalline-quality two-dimensional (2D) materials is at the core of novel material integration for semiconductor technology. This effort relies on developing fabrication and characterization techniques that can uncover the material's intrinsic properties by preserving its pristine conditions. In this article, we present an all ultra-high-vacuum cluster for the growth using molecular beam epitaxy of 2D semiconductors that are unstable under ambient conditions and optical spectroscopy using low temperature (20 K) photoluminescence and Raman scattering. The optical chamber of the setup provides micrometer scale spatial resolution and the ability to scan the entire wafer. The performance of its setup regarding spatial resolution, temperature control over a temperature range of 20-300 K using a closed-cycle cryostat and long-term preservation are…
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