Twist-engineering of a robust Quantum Spin Hall phase in $\beta$-/flat bismuthene bilayer from first principles
Umberto Pelliccia, Alberto M. Ruiz, Diego L\'opez-Alcal\'a, Gonzalo Abell\'an, Rafael Gonzalez-Hernandez, Jos\'e J. Baldov\'i

TL;DR
This study demonstrates how a 30° twist in a bismuthene bilayer induces a robust Quantum Spin Hall phase with enhanced topological properties, revealing new possibilities for spintronics applications.
Contribution
First-principles analysis of a novel twisted bismuthene heterostructure showing induced Rashba splitting and topological phases due to interlayer hybridization and SOC.
Findings
Induced Rashba spin-splitting due to twist and hybridization.
Confirmation of a robust Quantum Spin Hall phase via topological invariant calculations.
Chemical substitution modulates band gap while maintaining topology.
Abstract
Twist-engineering of topological phases in two-dimensional materials offers a powerful route to modulate electronic structure beyond conventional strain or chemical control. In particular, group 15 (pnictogens) monolayers such as bismuthene provide an ideal platform due to their strong intrinsic spin-orbit coupling (SOC) and robust topological character. Here, we investigate a previously unexplored heterostructure consisting of a -bismuthene monolayer rotated by 30 on a planar bismuthene layer stabilized on a SiC(0001) substrate. Using first-principles calculations, we demonstrate that this specific rotational alignment induces a unique interlayer orbital hybridization which, combined with the strong SOC and the naturally broken inversion symmetry, gives rise to a pronounced Rashba spin-splitting, absent in the isolated monolayers. The topological nature of the system is…
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