A Variable-Spot-Size and Multi-Frequency Square-Pulsed Source (SPS) Approach for Comprehensive Characterization of Anisotropic Thermal Transport Properties in Multilayered Thin Films

TL;DR

This paper presents a novel variable-spot-size and multi-frequency square-pulsed source method for detailed thermal property measurement in multilayered thin films, improving sensitivity and accuracy across layers.

Contribution

The study introduces a multi-parameter SPS approach combining variable spot size and broad frequency range for comprehensive thermal characterization of multilayered structures.

Findings

Successfully extracted seven key thermal parameters from a silicon-on-insulator sample.

Temperature-dependent measurements aligned well with literature and first-principles data.

Validated method enhances accuracy in measuring anisotropic thermal properties in complex multilayers.

Abstract

Multilayered thin-film structures are frequently encountered in industrial applications, where accurate thermal property characterization is essential for performance optimization. These films, typically ranging from nanometers to micrometers in thickness, often exhibit anisotropic thermal conductivity and non-bulk heat capacity, which are challenging to measure. In this study, we introduce a variable-spot-size and multi-frequency square-pulsed source (SPS) method for the simultaneous determination of anisotropic thermal conductivities, heat capacities, and interfacial thermal conductance in multilayered systems. By leveraging a broad modulation frequency range (1 Hz to 10 MHz) and tunable laser spot sizes, the SPS method enhances sensitivity to different thermal parameters across layers. We validate this approach on a silicon-on-insulator (SOI) sample comprising a 1.59 um Si layer, 1.03 um SiO2 layer, and a silicon substrate with a 122 nm aluminum (Al) transducer. The SPS method successfully extracts seven key thermal parameters, including the in-plane and cross-plane thermal conductivities and heat capacity of the Si film, the thermal conductivity and heat capacity of the SiO2 layer, the thermal conductivity of the substrate, and the interfacial thermal conductance between Al and Si. Temperature-dependent measurements from 80 to 500 K showed excellent agreement with literature values and first-principles predictions, confirming the method's accuracy and reliability. These results demonstrate the SPS method as a powerful tool for comprehensive thermal characterization of complex multilayered structures, with implications for both fundamental research and practical applications.