Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
Hemant Gulupalli, Navnil Choudhury, Jiacheng Xie, Yufeng Wu, Huili Grace Xing, Hong X. Tang, Debdeep Jena, Kanad Basu, Wenwen Zhao

TL;DR
This study investigates cryogenic loss limits in epitaxial AlN FBARs, developing a physics-based model to predict quality factors at low temperatures, relevant for quantum and communication technologies.
Contribution
The paper introduces a comprehensive, physics-based model that estimates cryogenic quality factor limits in AlN FBARs, validated against experimental data and benchmarked with other resonators.
Findings
Quality factor decreases from ~1589 at 6.5 K to 363 at 294 K.
The model accurately predicts temperature-dependent Q limits.
Validation against a 23 GHz HBAR confirms model transferability.
Abstract
Aluminum nitride (AlN)-based thin-film bulk acoustic wave resonators (FBARs) are promising compact platforms for 6G communications and quantum memory hardware, enabled by their integrable acoustic modes with high quality factors. However, temperature-dependent acoustic dissipation ultimately limits device performance. In this work, we fabricated a 16 GHz epitaxial AlN FBAR as a test platform, performed small-signal RF measurements from 6.5 K to 300 K, and developed a physics-based model to estimate the fundamental quality-factor limits of FBARs to cryogenic temperatures. The proposed model incorporates both intrinsic and extrinsic loss mechanisms, including an analytical anchor-radiation loss model for bulk acoustic wave resonators, rather than relying solely on finite-element simulations. Measured loaded quality factor (Q) decreases monotonically with temperature, from Qmax of…
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