Gate-Reconfigurable Single- and Double-Dot Transport in Trilayer MoSe2

TL;DR

This paper demonstrates gate-controlled single- and double-dot transport in trilayer MoSe2, showing reconfigurable quantum dot behavior with tunable interdot coupling and electrostatic landscape.

Contribution

It introduces a device architecture enabling gate-reconfigurable quantum dots in trilayer MoSe2, advancing control over quantum transport properties.

Findings

Single-dot Coulomb blockade observed at low backgate.

Double-dot configuration achieved with gate tuning.

Interdot coupling and alignment are gate-dependent.

Abstract

We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate regime, bias spectroscopy shows regular Coulomb-blockade diamonds characteristic of single-dot transport. As backgate is increased, additional low-bias structure develops beyond a simple single-dot pattern, indicating that the electrostatic landscape is reshaped and that a second dot becomes active in transport. In the higher-backgate regime, plunger-gate tuning and two-gate measurements establish a gate-reconfigurable double-dot configuration with two non-equivalent dots whose relative alignment and interdot coupling evolve with gate voltage. These results indicate that trilayer MoSe2 supports electrically reconfigurable single- and double-dot transport in the present device architecture.