A CMOS-compatible, scalable and compact magnetoelectric spin-torque microwave detector
Shuhui Liu, Riccardo Tomasello, Bin Fang, Aitian Chen, Like Zhang, Zhenhao Liu, Rui Hu, Wenkui Lin, Mario Carpentieri, Baoshun Zhang, Xixiang Zhang, Giovanni Finocchio, Zhongming Zeng

TL;DR
This paper presents a CMOS-compatible, scalable magnetoelectric spin-torque microwave detector that directly converts electromagnetic signals into DC output with high sensitivity and compact size.
Contribution
It introduces a monolithically integrated ME antenna with a magnetic tunnel junction, achieving high sensitivity and scalability for microwave detection.
Findings
Sensitivity > 90 kV/W for single device
Noise equivalent power of 3 pW*Hz^-0.5
Array with four MTJs exceeds 400 kV/W sensitivity
Abstract
The development of compact and highly sensitive microwave detectors compatible with complementary-metal-oxide-semiconductor (CMOS) processes is an active research area but remains a major challenge in microwave technology. Spin-torque diodes (STDs) are emerging nanoscale spintronic devices capable of surpassing the theoretical thermodynamic sensitivity limits of Schottky diodes. However, their practical use in compact systems is limited by the need of external antennas or probes. Here, we demonstrate a magnetoelectric (ME) spin-torque microwave detector that monolithically integrates an ME antenna with a magnetic tunnel junction (MTJ). The device directly converts wireless electromagnetic signals into a DC output at sub-microwatt power levels, achieving a sensitivity greater than 90 kV/W, a noise equivalent power of 3 pW*Hz^-0.5, and a compact footprint of 0.4 mm^2. This performance is…
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