Berry curvature and field-induced intrinsic anomalous Hall effect in an antiferromagnet FeTe

TL;DR

This paper theoretically investigates the intrinsic anomalous Hall effect in FeTe, revealing its sensitivity to temperature and magnetic field, and demonstrating its potential for quantum transport applications.

Contribution

It introduces a realistic spin-fermion model showing FeTe's large Berry-curvature-driven AHE and sign reversal, linking magnetism and topology in this antiferromagnet.

Findings

FeTe exhibits a large Berry-curvature-driven AHE under magnetic field.

Hall conductivity in FeTe is highly sensitive to temperature and field, with sign reversal.

FeTe is a promising platform for quantum transport in low-dimensional correlated systems.

Abstract

Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum technologies. Here, we present a theoretical study of the intrinsic AHE in tetragonal FeTe, a semimetallic van der Waals antiferromagnet with compensated magnetic ordering at low temperatures. Using a realistic spin-fermion model, we demonstrate that FeTe exhibits a large Berry-curvature-driven AHE under an applied magnetic field. Our calculations reveal that the Hall conductivity of this compound is extremely sensitive to temperature and field strength and even exhibits sign reversal, highlighting FeTe as a prototypical platform where magnetism and topology combine to produce robust intrinsic Hall responses. This work establishes FeTe as a promising candidate for exploring quantum transport in low-dimensional correlated systems. We also discuss the implications for recent experimental results of the AHE and ordinary Hall effect reported for FeTe.