Multiplexed cryo-CMOS control of an isolated double quantum dot
Mathieu Darnas, Mathilde Ouvrier-Buffet, Antoine Faurie, Jean-Baptiste Casanova, Benoit Bertrand, Candice Thomas, Jean Charbonnier, Jean-Philippe Michel, Bruna Cardoso Paz, Yvain Thonnart, Franck Badets, Franck Balestro, Matias Urdampilleta, Tristan Meunier, Baptiste Jadot

TL;DR
This paper demonstrates that multiplexed cryo-CMOS control can reliably operate a silicon double quantum dot at 0.5K, enabling scalable, stable, and rapid control of quantum dot charge states for quantum computing.
Contribution
It provides the first experimental validation of sample-and-hold multiplexed control for quantum dots at cryogenic temperatures, compatible with static biasing and pulsing.
Findings
Successfully biased a silicon double quantum dot at 0.5K using multiplexed control.
Achieved deterministic loading and stable access to multiple charge configurations.
Resolved single-electron tunneling events and stochastic switching during pulsing.
Abstract
Scalable spin-based quantum computing demands precise and stable control of a large number of gate-defined quantum dots while minimizing wiring complexity and thermal load. Control architectures based on sample-and-hold (SH) multiplexing techniques offer a promising solution by enabling sequential programming of several gate voltages using a limited number of input lines. However, the compatibility of such dynamic voltage refreshing with the stringent stability, noise, and speed requirements of quantum dot operation is an active subject of study. Here we experimentally demonstrate that a multiplexing cryo-CMOS circuit can reliably bias a silicon double quantum dot (DQD) at 0.5K. Exploiting the isolated regime, we show deterministic loading and isolation of four electrons and stable access to all five charge configurations from (4,0) to (0,4), despite the sequential voltage refreshing.…
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