Effect of Indium doping on structural and thermoelec-tric properties of SnTe

TL;DR

This study investigates how indium doping affects the structural and thermoelectric properties of SnTe, revealing optimal doping levels for enhanced power factors and structural stability.

Contribution

It provides detailed structural and thermoelectric analysis of In-doped SnTe, including synthesis, X-ray refinement, and property evaluation, highlighting optimal doping conditions.

Findings

Maximum power factor achieved at Sn0.96In0.04Te

Structural analysis confirms In substitution for Sn

Embedded phases detected in synthesized samples

Abstract

The solid state reaction method is employed to synthesize Sn1-xInxTe samples. Power Factors of synthesized samples are estimated from resistivity and thermopower data. Modifications in structural parameters, resistivity and thermopower owing to In doping in SnTe thermoelectric material are reported. In-depth structural analysis, employing Rietveld refinement of X-ray diffraction data, confirms the substitution of Sn by In. A minute amount of embedded phases in synthesized samples is revealed from the refinement of X-ray diffraction data. Williamson-Hall and modified Williamson-Hall methods are employed to estimate dislocation density and strain. The highest power factor and maximum host phases are simultaneously achieved for the Sn0.96In0.04Te sample amid the synthesized Sn1-xInxTe samples.