Time-dependent THz dielectric function of ZnTe under two-photon optical excitation at 800 nm wavelength

TL;DR

This study investigates how the THz dielectric function of ZnTe changes transiently under 800 nm femtosecond laser excitation, revealing free-carrier and phonon mode dynamics crucial for THz applications.

Contribution

It provides the first detailed characterization of the transient THz dielectric response of ZnTe under two-photon excitation at 800 nm using optical pump-THz probe spectroscopy.

Findings

Significant free-carrier generation via two-photon absorption affects the dielectric function.

Pump-driven activation of THz-active phonon modes observed.

Quantitative analysis of free carrier density and phonon oscillator strength obtained.

Abstract

ZnTe is arguably the most widely used nonlinear crystal for the generation and detection of THz radiation, used in conjunction with sub-bandgap optical excitation by femtosecond lasers operating near 800 nm. The THz dielectric function of ZnTe is the key parameter defining the efficiency and bandwidth of THz generation and detection. Here, we demonstrate that the THz dielectric function of ZnTe undergoes substantial transient modification at 800 nm sub-bandgap excitation under conditions typical for THz generation. These modifications arise from significant free-carrier generation via two-photon absorption of the 800 nm pump, accompanied by the pump-driven activation of the THz-active phonon modes. Using optical pump-THz probe spectroscopy, we characterized the THz dielectric function of ZnTe under 800 nm excitation as a function of pump fluence and pump-probe delay. Analysis of the experimental data within the Drude-Lorentz model provided the generated free carrier density and momentum scattering time, and oscillator strength of the pump activated THz phonon modes, revealing their transient evolution in dependence on the excitation conditions.