Topological Magneto-Optical Switching in Even-Layered MnBi$_2$Te$_4$
Shahid Sattar, Roman Stepanov, and C. M. Canali

TL;DR
This study demonstrates topological magneto-optical switching in even-layered MnBi₂Te₄ films, where layer thickness and spin alignment control the material's topological state and optical response, enabling multilevel MO switching.
Contribution
It introduces a thickness-dependent mechanism for topological MO switching in MnBi₂Te₄, revealing new Chern insulating phases with quantized MO responses.
Findings
Reversing outermost spin alignment switches the system from axion to Chern insulator.
6-layer MBT exhibits a switch from C=0 to C=1 with MO response change.
12-layer MBT supports a higher Chern number C=2 with doubled Faraday rotation.
Abstract
MnBiTe (MBT) thin films provide a unique material platform in which magnetism, topology, and magneto-optical (MO) response can be tuned through layer-thickness and relative spin alignments. In this work, using a low-energy coupled Dirac cone model together with Wannier-based tight-binding Hamiltonian derived from \textit{ab-initio} calculations, we investigate topological MO switching in even-layered MBT films. We argue that the relative spin alignment of the outermost septuple-layers (SL) mainly controls the total Chern number, optical conductibility, and consequently, the MO response. For a 6-SL MBT thin film, we found that reversing the outermost-SL alignments from antiparallel to parallel switches the system from axion insulating state with and vanishing Faraday rotation to a Chern insulating state with and a quantized MO response, irrespective of -symmetry…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
