Alterelectricity: Electrical Analogue of Altermagnetism

TL;DR

This paper introduces alterelectricity, an electrical analogue of altermagnetism, demonstrating its theoretical framework, material realizations, and potential applications like a tunnel junction with high electroresistance.

Contribution

It establishes the concept of alterelectricity, identifies material examples, and proposes a functional device exploiting switchable anisotropic Fermi surfaces.

Findings

Identified two material realizations of alterelectricity: bilayer sliding and ferroelectric switchability.

Developed a symmetry framework for detecting alterelectricity.

Proposed an alterelectric tunnel junction with 120% tunneling electroresistance.

Abstract

We propose alterelectricity, an electrical analogue of altermagnetism, in which two switchable states possess alternating band structures. Such alterelectric states arise when a switchable sublattice-selective structural change connects two configurations related by a non-inversion symmetry. Using an anisotropic Lieb-lattice model, we establish a general symmetry framework for identifying alterelectricity. We further identify two material realizations of alterelectricity: (i) interlayer sliding in bilayers, as exemplified by tetragonal Ag2N and hexagonal FeHfI6; and (ii) ferroelectrically switchable Ti-adsorbed SnP2S6. We also propose an alterelectric tunnel junction that exploits switchable anisotropic Fermi surfaces to achieve a sizable tunneling electroresistance of 120%. This work establishes the foundational concept of alterelectricity and expands the material landscape of ferroic electronics.