Investigating the intrinsic anomalous Hall effect in MnPt3 topological semimetal

TL;DR

This study explores the intrinsic anomalous Hall effect in MnPt$_3$ topological semimetal films, revealing that strain influences the Berry curvature and enhances the intrinsic anomalous Hall conductivity.

Contribution

It provides the first systematic investigation of MnPt$_3$ thin films, demonstrating how strain tuning can modulate the intrinsic AHE in topological semimetals.

Findings

Intrinsic AHC increases with film thickness.

Strain likely enhances the intrinsic AHC.

Extrinsic contributions are minimal and thickness-independent.

Abstract

The cubic Cu$_3$Au-type $X$Pt$_3$ family ($X$ = V, Cr, and Mn) is a topological semimetal characterized by anti-crossing gapped nodal lines near the Fermi level, which give rise to significant Berry curvatures and thus to the anomalous Hall effect (AHE). Among the three members, CrPt$_3$ has been experimentally verified to exhibit a large anomalous Hall conductivity (AHC), while its counterparts MnPt$_3$ and VPt$_3$ remain largely unexplored. Here, a series of MnPt$_3$ thin films with varying thicknesses (20--70 nm) was epitaxially grown on the MgO substrates using magnetron sputtering and was systematically investigated by magnetization, electrical resistivity, and Hall resistivity measurements. MnPt$_3$ films undergo a ferromagnetic transition at a Curie temperature $T_\mathrm{C}$, which increases as the film thickness increases, reaching $\sim$ 344 K for the 70-nm-thick film. All the anomalous Hall transport properties of MnPt$_3$ films, including the resistivity, conductivity, and angle, exhibit a strong correlation with their magnetic properties. The scaling analysis suggests that the intrinsic Berry-curvature mechanism dominates the observed AHE, while the extrinsic contributions are much smaller. The intrinsic AHC increases as the film thickness increases, while the extrinsic AHC is thickness-independent. Such an enhanced intrinsic AHC in the MnPt$_3$ films is most likely attributed to the strain effect, implying that it serves as an effective method to tune the electronic band topology in the $X$Pt$_3$ topological semimetal.