High Breakdown Field Multi-kV UWBG AlGaN Transistors

TL;DR

This paper presents UWBG AlGaN PolFETs with high on-state current, large breakdown field, and multi-kV robustness, suitable for high-voltage RF and power applications.

Contribution

It demonstrates the first high-performance UWBG AlGaN PolFETs with record-breaking current, breakdown field, and voltage robustness, along with high RF performance.

Findings

On-state current of ~960 mA/mm achieved.

Breakdown field exceeds 4.8 MV/cm.

RF frequencies of 8.5 and 15 GHz demonstrated.

Abstract

We demonstrate high-performance UWBG AlGaN PolFETs exhibiting a state-of-the-art combination of nearly 1 A/mm on-state current (~ 960 mA/mm) and large breakdown field (> 4.8 MV/cm) in high carrier density (1.15 x 1013 cm-2). Multi-kV robustness is successfully demonstrated exhibiting 1.28 and 2.17 kV by utilizing a gate-connected field plate structures in 3.9 and 6.8 {\mu}m LGD, corresponding to the extremely low specific on-resistance of 1.25 and 2.86 m{\Omega}cm2, respectively. High RF performance is also achieved, providing fT and fMAX, of 8.5 and 15 GHz, respectively, for 3.9 {\mu}m LGD. These results highlight UWBG AlGaN as a platform for both high-voltage RF and power applications.