Tunable Valley Polarization in Diamond

TL;DR

This paper demonstrates a diamond-based valley transistor with dual-gate architecture that enables tunable and robust valley-polarized transport, highlighting diamond's potential for energy-efficient valleytronic devices.

Contribution

It introduces a novel diamond valley transistor with dual-gate control, enabling tunable valley polarization and demonstrating robustness against thermal variations.

Findings

Achieved tunable valley-polarized transport via gate voltage modulation.

Demonstrated robustness of valley polarization over macroscopic distances.

Showed potential for energy-efficient quantum and high-power electronics.

Abstract

Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate information. In this work, we demonstrate a diamond-based valley transistor with a dual-gate, two-drain architecture that enables tunable valley-polarized transport via gate voltage modulation. By leveraging the significant effective-mass anisotropy of diamond's conduction band valleys, this architecture provides control over spatial distribution and transit times. We further demonstrate that valley-polarized transport in diamond is remarkably robust against thermal variations over macroscopic distances. These results demonstrate the resilience of valley states and highlight diamond's potential for energy-efficient valleytronic devices in next-generation quantum and high-power electronics.