Near 13% efficient semitransparent Cu(In,Ga)S2 solar cells with band gap of 1.6 eV on transparent back contact
Kulwinder Kaur, Arivazhagan Valluvar Oli, Michele Melchiorre, Wolfram Hempel, Wolfram Witte, Jan Keller, Susanne Siebentritt

TL;DR
This study demonstrates near 13% efficiency semitransparent Cu(In,Ga)S2 solar cells with a 1.6 eV band gap on transparent back contacts, highlighting the effects of sodium and growth conditions on performance.
Contribution
It introduces optimized fabrication methods for wide-gap Cu(In,Ga)S2 solar cells with improved efficiency and passivation layers, suitable for tandem applications.
Findings
Achieved 12.7% efficiency with Na diffusion from glass.
NaF co-evaporation improves photoluminescence quantum yield.
High temperature growth enhances absorber quality and wide-gap formation.
Abstract
Wide-gap Cu(In,Ga)S2 solar cells with In2O3:Sn (ITO) as transparent back contact are evaluated for the application as top cells in tandem devices. The effect of Na on the solar cell performance is investigated by supplying additional Na by NaF co-evaporation or exclusively by Na diffusion from glass. An efficiency of 12.7% is achieved for a semitransparent solar cell with a band gap of 1.6 eV, with sufficient Na diffusion from glass only, allowed by a thin ITO layer. Absorber grown with additional NaF co-evaporation during Cu(In,Ga)S2 growth on thicker ITO show a comparable efficiency of 12%. High temperature growth at Tsub = 630{\deg}C enhances overall absorber quality and results in wide-gap absorbers, with photoluminescence quantum yield improved to 1.5 x 10-5, two orders of magnitude higher than absorber grown at low temperature. NaF co-evaporation is effective in suppressing deep…
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