Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing
Delang Liang, Shiyu Wang, Yan Wang, Dong Li, Yuchun Chen, Bin Cheng, Mingyang Qin, Dehong Yang, Jie Sheng, Lin Li, Changgan Zeng, Dong Sun, Anlian Pan, Jing Liu

TL;DR
The paper introduces LuminoMem, an ultrafast, non-volatile optoelectronic memory device that combines electrical storage and mid-infrared light emission using a Weyl semiconductor, enabling high-speed optical data storage and neural network applications.
Contribution
It presents a novel floating-gate architecture with tellurium for simultaneous charge trapping and emission, achieving nanosecond programming and multi-level optical storage.
Findings
Achieved 4-bit (16-level) optical storage capacity.
Demonstrated neural network simulations with high accuracy on Fashion-MNIST.
Enabled direct optical access to stored states without external modulation.
Abstract
Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we report an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission in a single device. The device utilizes a floating-gate architecture, in which the Weyl semiconductor tellurium serves simultaneously as a charge-trapping storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence at 3.4 um, allowing direct…
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