Production of Upgraded Metallurgical Grade (UMG) silicon for a low-cost high-efficiency and reliable PV technology
Jos\'e Manuel M\'iguez Novoa, Volker Hoffmann, Eduardo Fornies, Laura Mendez, Marta Tojeiro, Fernando Ruiz, Manuel Funes, Carlos del Ca\~nizo, David Fuertes Marr\'on, Nerea Dasilva Villanueva, Luis Jaime Caballero, B\"ulent Ar{\i}kan, Ra\c{s}it Turan, Hasan H\"useyin Canar

TL;DR
This paper demonstrates the development of upgraded metallurgical grade silicon as a cost-effective, high-efficiency alternative to polysilicon for photovoltaic applications, with comparable performance and improved environmental profile.
Contribution
It presents a comprehensive process optimization for UMG-Si, including purification, doping, defect engineering, and device fabrication, achieving high-efficiency solar cells and modules.
Findings
UMG-Si achieves cell efficiencies comparable to polysilicon-based cells.
Degradation mechanisms are minimal with proper regeneration steps.
Environmental impact of UMG-Si is favorable compared to traditional polysilicon.
Abstract
UMG-Si has the potential to reduce the cost of PV technology and to improve its environmental profile. In this contribution, we summarize the extensive work made in the research and development of UMG technology for PV, which has led to the demonstration of UMG-Si as a competitive alternative to polysilicon for the production of high-efficiency multicrystalline solar cells and modules. The tailoring of the processing steps along the complete Ferrosolar's UMG-Si manufacturing value chain has been addressed, commencing with the purification stage that results in a moderately compensated material due to the presence of phosphorous and boron. Gallium is added as a dopant at the crystallization stage to obtain a uniform resistivity profile 1 Ohm*cm along the ingot height. Defect engineering techniques based on phosphorus diffusion gettering have been optimized to improve the bulk electronic…
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