Negative-Voltage-Enabled Energy Efficient Nonvolatile Memories And In-Memory Computing Based On 2D Piezoelectric Transistors
Jeffry Victor, Sumeet K. Gupta

TL;DR
This paper introduces negative-voltage-enabled PeFET memories that significantly improve energy efficiency and support in-memory computing, overcoming previous trade-offs between density, energy use, and functionality.
Contribution
It proposes two novel PeFET memory designs utilizing negative voltage to enhance energy efficiency and enable in-memory computing capabilities.
Findings
Achieved up to 97% reduction in read energy compared to 6T-SRAM.
Reduced write energy to as low as 0.03x of prior PeFET designs.
Demonstrated energy-efficient in-memory computing primitives like MAC.
Abstract
Piezoelectric FET (PeFET) is a promising non-volatile-memory (NVM) device that integrates a piezoelectric (PE)/ferroelectric (FE) capacitor with a 2D transistor. It uses the polarization of the FE capacitor for bit-storage and strain-induced bandgap change of the 2D channel during read. Previous PeFET-based NVM designs have shown immense promise in achieving high density and energy-efficiency compared to SRAM. However, a key limitation of these designs is that they must trade-off integration density to enhance energy-efficiency or augment the memory functionality with in-memory computing (IMC). In this work, we show that the unique structure of the PeFET presents an appealing opportunity to counter these limitations, thereby simultaneously achieving high density, high energy-efficiency, and IMC-compatibility. First, we highlight the key reasons for the limited energy-efficiency of the…
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