Loop-level surrogate modeling of dopant-distribution effects in Ba(Zr,Ti)O$_3$
Heiko R\"othl, Elke Kraker, Julien Magnien, Manfred M\"ucke, Florian Mayer

TL;DR
This paper introduces a surrogate modeling approach that links dopant spatial distributions in Ba(Zr,Ti)O$_3$ to their electromechanical response, enabling rapid design and screening of functional properties.
Contribution
It develops a novel accelerated workflow combining distribution encoding, surrogate modeling, and full response prediction for dopant-distribution effects in ferroelectrics.
Findings
Dopant distribution significantly influences hysteresis behavior and performance metrics.
The surrogate model accurately predicts polarization-electric-field loops from distribution parameters.
Design maps reveal how different distribution motifs optimize energy storage and electromechanical response.
Abstract
Barium titanate-based perovskites are important candidates for lead-free dielectric and electromechanical technologies. In Zr-substituted BaTiO (BZT), functional behavior is usually discussed in terms of the average Zr concentration, while the influence of dopant spatial distribution beyond average concentration is less understood and difficult to explore systematically. Here we present an accelerated materials-design workflow that links controlled dopant distributions to full field-driven response curves. We generate a broad set of Zr distributions spanning a continuum of nanoscale arrangements, with layers, rods, dots, and lamellae serving as representative end-member motifs, and encode each configuration using a compact, parametrized descriptor model. Effective-Hamiltonian molecular dynamics is used to compute polarization-electric-field and strain-field hysteresis loops, and we…
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